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  rev.2.00, dec.17.200 4, page 1 of 7 BCR5KM-14LC triac medium power use rej03g0332-0200 rev.2.00 dec.17.2004 features ? i t (rms) : 5 a ? v drm : 700 v ? i fgti , i rgti , i rgt : 50 ma ? viso : 2000 v ? the product guaranteed maximum junction temperature 150 c. ? insulated type ? planar passivation type outline 2 1 3 1. t 1 terminal 2. t 2 terminal 3. gate terminal to-220fn 1 3 2 applications motor control, heater control maximum ratings voltage class parameter symbol 14 unit repetitive peak off-state voltage note1 v drm 700 v non-repetitive peak off-state voltage note1 v dsm 800 v
BCR5KM-14LC rev.2.00, dec.17.200 4, page 2 of 7 parameter symbol ratings unit conditions rms on-state current i t (rms) 5 a commercial frequency, sine full wave 360 conduction, tc = 116 c surge on-state current i tsm 30 a 60hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t 3.7 a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 5 w average gate power dissipation p g (av) 0.5 w peak gate voltage v gm 10 v peak gate current i gm 2 a junction temperature tj ? 40 to +150 c storage temperature tstg ? 40 to +150 c mass ? 2.0 g typical value isolation voltage viso 2000 v ta = 25 c, ac 1 minute, t 1 t 2 g terminal to case notes: 1. gate open. electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak off-state current i drm ? ? 2.0 ma tj = 125 c, v drm applied on-state voltage v tm ? ? 1.8 v tc = 25 c, i tm = 7 a, instantaneous measurement v fgt ? ? 1.5 v ? v rgt ? ? 1.5 v gate trigger voltage note2 ?? v rgt ?? ? ? 1.5 v tj = 25 c, v d = 6 v, r l = 6 ? , r g = 330 ? i fgt ? ? 50 ma ? i rgt ? ? 50 ma gate trigger current note2 ?? i rgt ?? ? ? 50 ma tj = 25 c, v d = 6 v, r l = 6 ? , r g = 330 ? gate non-trigger voltage v gd 0.2 ? ? v tj = 125 c, v d = 1/2 v drm thermal resistance r th (j-c) ? ? 4.2 c/w junction to case note3 critical-rate of rise of off-state commutating voltage note4 (dv/dt)c 5 ? ? v/ s tj = 125 c notes: 2. measurement usi ng the gate trigger characteristics measurement circuit. 3. the contact thermal resistance r th (c-f) in case of greasing is 0.5c/w. 4. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125 c 2. rate of decay of on-state commutating current (di/dt)c = ? 2.5 a/ms 3. peak off-state voltage v d = 400 v supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c
BCR5KM-14LC rev.2.00, dec.17.200 4, page 3 of 7 performance curves 0 5 10 15 20 25 30 35 40 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.8 3.4 10 -1 2 3 5 7 2 3 5 7 2 3 5 7 10 0 10 1 10 2 10 0 10 1 2 3 57 2 3 5710 2 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v gm = 10 v p gm =5w i gm = 2 a p g(av) = 0.5 w v gt = 1.5 v v gd = 0.2 v i fgt i i rgt ii i rgt iii i fgti i rgti i rgtiii 10 -1 10 0 10 1 2 3 5 7 2 3 5 7 2 3 5 7 10 2 10 1 2 3 57 2 3 57 2 3 57 10 2 10 3 10 4 2 3 5 7 2 3 5 7 10 1 10 2 10 3 2 3 5 7 2 3 5 7 10 1 10 2 10 3 2 3 57 2 3 57 2 3 57 10 -1 10 0 10 1 10 2 23 5 23 5 7 10 2 10 3 maximum on-state characteristics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 60 hz) surge on-state current (a) tj = 25c gate characteristics (i, ii and iii) gate current (ma) gate voltage (v) gate trigger voltage vs. junction temperature junction temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) gate trigger current vs. junction temperature junction temperature (c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) maximum transient thermal impedance characteristics (junction to case) conduction time (cycles at 60 hz) transient thermal impedance (c/w) typical example typical example
BCR5KM-14LC rev.2.00, dec.17.200 4, page 4 of 7 0 1 2 3 4 5 6 7 8 9 10 0 12345678 10 1 10 2 10 3 10 4 10 5 2 3 57 2 3 57 2 3 57 2 3 57 10 0 10 -1 10 1 10 3 10 2 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 012345678 012345678 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 120 120 t2.3 100 100 t2.3 60 60 t2.3 10 2 10 3 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 10 4 10 5 10 6 rms on-state current (a) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance (c/w) conduction time (cycles at 60 hz) on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation rms on-state current (a) case temperature (c) allowable case temperature vs. rms on-state current allowable ambient temperature vs. rms on-state current ambient temperature (c) rms on-state current (a) ambient temperature (c) allowable ambient temperature vs. rms on-state current junction temperature (c) repetitive peak off-state current (tj = tc) repetitive peak off-state current (tj = 25c) 100 (%) repetitive peak off-state current vs. junction temperature no fins curves apply regardless of conduction angle 360 conduction resistive, inductive loads 360 conduction resistive, inductive loads all fins are black painted aluminum and greased curves apply regardless of conduction angle resistive, inductive loads natural convection typical example natural convection no fins curves apply regardless of conduction angle resistive, inductive loads
BCR5KM-14LC rev.2.00, dec.17.200 4, page 5 of 7 -60 -40 -20 0 20 40 60 80 100 120 140 160 10 1 2 3 5 7 2 3 5 7 10 2 10 3 -60 -40 -20 0 20 40 60 80 100 120 140 160 2 3 5 7 2 3 5 7 2 3 5 7 10 0 10 1 10 2 10 3 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 10 1 23 57 23 57 23 57 10 2 10 3 10 4 10 1 23 57 23 57 23 57 10 2 10 3 10 4 23 57 23 57 10 0 10 1 10 2 10 0 2 3 5 2 3 5 7 7 10 1 7 0 rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = x v/ms) breakover voltage (dv/dt = 1 v/ms) 100 (%) breakover voltage vs. rate of rise of off-state voltage (tj = 125c) rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = x v/ms) breakover voltage (dv/dt = 1 v/ms) 100 (%) breakover voltage vs. rate of rise of off-state voltage (tj = 150c) breakover voltage vs. junction temperature junction temperature (c) breakover voltage (tj = tc) breakover voltage (tj = 25c) 100 (%) commutation characteristics (tj = 125c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) holding current vs. junction temperature junction temperature (c) holding current (tj = tc) holding current (tj = 25c) 100 (%) latching current (ma) latching current vs. junction temperature junction temperature (c) typical example distribution t 2 + , g ? typical example t 2 + , g + t 2 ? , g ? typical example typical example tj = 125c iii quadrant i quadrant typical example typical example tj = 150c iii quadrant i quadrant i quadrant iii quadrant minimum characteristics value typical example tj = 125c i t = 4 a = 500 ms v d = 200 v f = 3 hz main voltage main current i t (di/dt)c v d time time (dv/dt)c
BCR5KM-14LC rev.2.00, dec.17.200 4, page 6 of 7 i fgti i rgti i rgtiii 23 57 23 57 10 0 10 1 10 2 10 0 2 3 5 2 3 5 7 7 10 1 7 23 57 23 57 10 0 10 1 10 2 2 3 5 7 2 3 5 7 10 1 10 2 10 3 gate trigger characteristics test circuits test procedure i test procedure iii test procedure ii commutation characteristics (tj = 150c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) gate trigger current (tw) gate trigger current (dc) 100 (%) gate current pulse width ( s) gate trigger current vs. gate current pulse width 6 ? 6 ? 6 ? 6 v 6 v 6 v 330 ? 330 ? 330 ? a v a v a v main voltage main current i t (di/dt)c v d time time (dv/dt)c typical example tj = 150c i t = 4 a = 500 ms v d = 200 v f = 3 hz i quadrant iii quadrant typical example
BCR5KM-14LC rev.2.00, dec.17.200 4, page 7 of 7 package dimensions to-220fn eiaj package code jedec code mass (g) (reference value) lead material ? 2.0 cu alloy ? symbol dimension in millimeters min typ max a a 1 a 2 b d e e x y 1 y zd ze 10 0.3 15 0.3 14 0.5 3 0.3 3.6 0.3 2.54 0.25 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 6.5 0.3 2.6 0.2 4.5 0.2 2.8 0.2 0.75 0.15 3.2 0.2 note 1) the dimensional figures indicate representative values unless otherwise the tolerance is specified. order code lead form standard packing quantity standard order code standard order code example straight type tube 50 type name BCR5KM-14LC lead form tube 50 type name ? lead forming code BCR5KM-14LC-a8 note : please confirm the specificat ion about the shipping in detail.
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is al ways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating i n the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents in formation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or e rrors. please also pay attention to information published by renesas technology corp. by various means, including the renesas technolo gy corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under cir cumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materia ls. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lice nse from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is pro hibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to " http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. unit2607 ruijing building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas sales offices ? 200 4. re nesas technology corp ., all rights reser v ed. printed in ja pan. colophon .2.0


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